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  • Product Name

    3D Freestanding Graphene Foam

    Stock No. NCZ-GSW-0023
    Purity > 99.9%
    Graphene Film
    FET Electron Mobility on Al2O3 2000 cm2/Vs
    Hall Electron Mobility on SiO2/Si  4000 cm2/Vs

    PRODUCT DETAIL

    CAS No.: 7440-44-0

    Density: ~ 0.2g/cm3

    Thickness:  ~ 0.5mm

    Number of layers: ~ 8 layers

    Sheet Resistance <600Ω/sq
    Custom Order <300Ω/sq
    Transparency >95%
    $0.00
  •  CAS No.: 7782-42-5 (graphene), 7440-02-0 (nickel)

    Sheet Resistance <600Ω/sq
    Custom Order <300Ω/sq
    Transparency >95%

     

    Product Name

    3D Graphene on Nickel/Copper Foam

    Stock No. NCZ-GSW-0022
    Purity > 99.9%
    Graphene Film
    FET Electron Mobility on Al2O3 2000 cm2/Vs
    Hall Electron Mobility on SiO2/Si  4000 cm2/Vs

     

    $0.00
  • CAS No.: 7782-42-5 (graphene), 7440-50-8 (copper)

    PREPARATION METHOD: CVD Method

    WAFER STRUCTURE: Graphene on Copper Foil (both sides),  Copper Foil 45 µm

    CHARACTERIZATION & ANALYSIS

    Predominantly Single-layer Graphene on Copper Substrate

    Sheet Resistance <600Ω/sq
    Custom Order <300Ω/sq
    Transparency >95%

     

    Product Name

    CVD Graphene on Copper Foil

    Stock No. NCZ-GSW-0016
    Purity > 99.9%
    Graphene Film
    FET Electron Mobility on Al2O3 2000 cm2/Vs
    Hall Electron Mobility on SiO2/Si  4000 cm2/Vs

     

    $0.00
  • Product Name

    CVD Graphene on PET Substrate

    Stock No. NCZ-GSW-0019
    Purity > 99.9%
    Graphene Film
    FET Electron Mobility on Al2O3 2000 cm2/Vs
    Hall Electron Mobility on SiO2/Si  4000 cm2/Vs

    PRODUCT DETAIL

    CAS No.: 7782-42-5 (graphene), 25038-59-9 (PET)

    PET Substrate: ~188µm thick

    Sheet Resistance <600Ω/sq
    Custom Order <300Ω/sq
    Transparency >95%
    $0.00
  • Product Name

    CVD Graphene on  Quartz Substrate

    Stock No. NCZ-GSW-0020
    Purity > 99.9%
    Graphene Film
    FET Electron Mobility on Al2O3 2000 cm2/Vs
    Hall Electron Mobility on SiO2/Si  4000 cm2/Vs

    PRODUCT DETAIL

    CAS No.: 7782-42-5 (graphene)

    Sheet Resistance <600Ω/sq
    Custom Order <300Ω/sq
    Transparency >95%

     

    CVD Graphene Substrate
    1cm x 1cm Diameter: 1inch, Thickness: 3mm*
    1inch x 1inch 30mm x 30mm, Thickness: 1mm

    We can also provide 15mm x 15mm and 1mm thick substrate and other sizes based on your request. Please contact us for more information.

    $0.00
  • Product Name

    CVD Graphene On Silicon Substrate

    Stock No. NCZ-GSW-0017
    Purity > 99.9%
    Graphene Film
    FET Electron Mobility on Al2O3 2000 cm2/Vs
    Hall Electron Mobility on SiO2/Si  4000 cm2/Vs
    Sheet Resistance  450±40 Ω/sq (1cm x1cm)

    PRODUCT DETAIL

    CAS No.: 7782-42-5 (graphene), 7440-21-3 (silicon)

    Transparency >95%

    PREPARATION METHOD:

    1. Copper-based graphene is prepared by CVD method.
    2. Graphene is transferred from copper to silicon substrate.

    SILICON WAFER:

    Wafer Thickness: 525 µm, (customization is possible)
    Resistivity: <0.01 ohm-cm
    Type/Dopant: P/N
    Orientation: <100> (customization is possible)
    Front Surface: Polished
    Back Surface: Etched
    $0.00
  • Product Name

    CVD Graphene on SiO2 Substrate/Wafer

    Stock No. NCZ-GSW-0018
    Purity > 99.9%
    Graphene Film
    FET Electron Mobility on Al2O3 2000 cm2/Vs
    Hall Electron Mobility on SiO2/Si  4000 cm2/Vs

    PRODUCT DETAIL

    CAS No.: 7782-42-5 (graphene), 7631-86-9 (silicon dioxide), 7440-21-3 (silicon)

    Sheet Resistance <600Ω/sq
    Custom Order <300Ω/sq
    Transparency >95%

    GRAPHENE ON SILICON DIOXIDE (300NM)/SI SUBSTRATE (P-TYPE, 1-10 Ω·CM) 

    CVD Graphene Substrate
    1cm x 1cm 1.5cm x 1.5cm, thickness: 300nm SiO2/700um Si
    1inch x 1inch 3.0cm x 3.0cm, thickness: 300nm SiO2/700um Si
    3cm x 3cm 3.5cm x 3.5cm, thickness: 300nm SiO2/700um Si
    7cm x 7cm Diameter: 4inch, thickness: 300nm SiO2/600um Si
    $0.00
  • Graphene On Lacey Carbon 300 Mesh Copper TEM Grids

    Product Name Graphene On Lacey Carbon 300 Mesh Copper TEM Grids
    Stock No. NCZ-GSW-0015
    Purity > 99.9%
    Graphene Film
    FET Electron Mobility on Al2O3 2000 cm2/Vs
    Hall Electron Mobility on SiO2/Si  4000 cm2/Vs
    Sheet Resistance  450±40 Ω/sq (1cm x1cm)

    PRODUCT DETAIL

    CAS No.: 7782-42-5

    Graphene TEM Support Films are supported by a lacey carbon film on a 300 mesh copper TEM grid.

    Characteristics

    1. Four thicknesses of CVD graphene: Available in either 1, 2, 3-5 or 6-8 layers
    1. TEM Substrate: Lacey carbon support film on 300 mesh copper TEM grid
    1. Graphene coverage of the TEM grid is better than 75%

    Appearance

    The graphene film appears as a near-transparent to light-grey film on the surface of the Lacey Carbon mesh on a red-brown colored copper TEM grid.

    Type Thickness of the Graphene Transparency TEM Grid/AFM Substrate Support Film
    1 Layer  ~0.35 nm  ~96.4% 300 Mesh Copper Grid N/A
    2 Layers  ~0.7 nm  ~92.7% 300 Mesh Copper Grid N/A
    3-5 Layers  1.0-1.7 nm  ~85.8-90.4% 300 Mesh Copper Grid N/A
    6-8 Layers  2.1-2.8 nm  ~78.5-83.2% 300 Mesh Copper Grid N/A

    Please contact us for customization and price inquiry.

    $0.00
  • Graphene on Silicon Nitride TEM Grids 

    Product Name Graphene on Silicon Nitride TEM Grids
    Stock No. NCZ-GSW-0012
    Purity > 99.9%
    Graphene Film
    FET Electron Mobility on Al2O3 2000 cm2/Vs
    Hall Electron Mobility on SiO2/Si 4000 cm2/Vs
    Sheet Resistance  450±40 Ω/sq (1cm x1cm)

    PRODUCT DETAIL

    Characteristics

    1. Four thicknesses of CVD graphene: Available in either 1, 2, 3-5 or 6-8 layers
    1. TEM Substrate:  200 µm thick 3.0mm hexagonal silicon substrate with a 0.5×0.5mm aperture and 200nm thick silicon nitride membrane with approximately 6,400 2.5µm holes
    1. Graphene coverage of the TEM grid is > 75%

    Appearance

    Solid hexagonal disk with a greenish hue. The graphene film appears as a near-transparent to light-grey film on the surface of the microporous silicon Nitride membrane.

    Type Thickness of the Graphene Transparency TEM Grid/AFM Substrate Support Film
    1 Layer  ~ 0.35 nm  ~ 96.4% 2.5 μm Hole Silicon Nitride Silicon Nitride
    2 Layers  ~0.7 nm  ~92.7% 2.5 μm Hole Silicon Nitride Silicon Nitride
    3-5 Layers  1.0-1.7 nm  ~85.8-90.4% 2.5 μm Hole Silicon Nitride Silicon Nitride
    6-8 Layers  2.1-2.8 nm  ~78.5-83.2% 2.5 μm Hole Silicon Nitride Silicon Nitride

    Please contact us for customization and price inquiry.

    $0.00
  • Graphene on Ultra-Flat Thermal SiO2 Substrate

    Product Name Graphene on Ultra-Flat Thermal SiO2 Substrate
    Stock No. NCZ-GSW-0011
    Purity > 99.9%
    Graphene Film
    FET Electron Mobility on Al2O3 2000 cm2/Vs
    Hall Electron Mobility on SiO2/Si 4000 cm2/Vs
    Sheet Resistance  450±40 Ω/sq (1cm x1cm)

     PRODUCT DETAIL

    Characteristics

    1. Four thicknesses of CVD graphene: Available in either 1, 2, 3-5 or 6-8 layers
    1. The Ultra-flat Thermal SiO2 Substrate consists of a 200 nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5mm x 5mm.
    2. Graphene coverage of the TEM grid is 75-95 %
    Type Thickness of the Graphene Transparency Support Film
    1 Layer ~0.35nm ~96.4% Ultra-flat Silicon
    2 Layers ~0.7nm ~92.7% Ultra-flat Silicon
    3-5 Layers 1.0-1.7nm ~85.8-90.4% Ultra-flat Silicon
    6-8 Layers 2.1-2.8nm ~78.5-83.2% Ultra-flat Silicon

    Please contact us for customization and price inquiry.

    $0.00
  • Graphene coated TEM Grids

    Product Name Graphene On Ultra-Fine 200 Mesh Copper TEM Grids
    Stock No. NCZ-GSW-0014
    Purity > 99.9%
    Graphene Film
    FET Electron Mobility on Al2O3 2000 cm2/Vs
    Hall Electron Mobility on SiO2/Si  4000 cm2/Vs
    Sheet Resistance  450±40 Ω/sq (1cm x1cm)

    CAS No.: 7782-42-5

    Characteristics

    1. Four thicknesses of CVD graphene: Available in either 1, 2, 3-5 or 6-8 layers
    1. TEM Substrate: Microporous Copper TEM Grids with Beryllium-Copper Support Aperture
    1. Graphene coverage of the TEM grid is better than 75%

    Appearance

    The graphene film appears as a near-transparent to light-grey film on the surface of the red-brown microporous copper TEM grid. For support, the TEM grid is attached using epoxy to a gold-colored beryllium-copper disk with a 2x1mm aperture.

    Type Thickness of the Graphene Transparency TEM Grid/AFM Substrate Support Film
    1 Layer  ~0.35 nm  ~96.4% 200 Mesh Copper Grid N/A
    2 Layers  ~0.7 nm  ~92.7% 200 Mesh Copper Grid N/A
    3-5 Layers  1.0-1.7 nm  ~85.8-90.4% 200 Mesh Copper Grid N/A
    6-8 Layers  2.1-2.8 nm  ~78.5-83.2% 200 Mesh Copper Grid N/A

    Please contact us for customization and price inquiry.

    $0.00
  • Product Name

    Graphene-coated PMMA and PET

    Stock No. NCZ-GSW-0021
    Purity > 99.9%
    Graphene Film
    FET Electron Mobility on Al2O3 2000 cm2/Vs
    Hall Electron Mobility on SiO2/Si  4000 cm2/Vs

    CAS No.: 7782-42-5 (graphene)

    Sheet Resistance <600Ω/sq
    Custom Order <300Ω/sq
    Transparency >95%
    $0.00
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