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Graphene on SiO2 Substrate

Product Name

Graphene on SiO2 Substrate

Stock No. NCZ-GSW-0011
Purity > 99.9%

Graphene Film

FET Electron Mobility on Al2O3 2000 cm2/Vs
Hall Electron Mobility on SiO2/Si 4000 cm2/Vs
Sheet Resistance  450±40 Ω/sq (1cm x1cm)

 PRODUCT DETAIL

Characteristics

  1. Four thicknesses of CVD graphene: Available in either 1, 2, 3-5 or 6-8 layers
  1. The Ultra-flat Thermal SiO2 Substrate consists of a 200 nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5mm x 5mm.
  2. Graphene coverage of the TEM grid is 75-95 %
Type Thickness of the Graphene Transparency Support Film
1 Layer ~0.35nm ~96.4% Ultra-flat Silicon
2 Layers ~0.7nm ~92.7% Ultra-flat Silicon
3-5 Layers 1.0-1.7nm ~85.8-90.4% Ultra-flat Silicon
6-8 Layers 2.1-2.8nm ~78.5-83.2% Ultra-flat Silicon

Please contact us for customization and price inquiry.

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Description

Description

Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities and customization. E-mail: contact@nanochemazone.com

Customization:

If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) is available upon request.

NOTE:

Images, pictures, colors, particle sizes, purity, packing, descriptions, and specifications for the real and actual goods may differ. These are only used on the website for the purposes of reference, advertising, and portrayal. Please contact us via email at sales@nanochemazone.com or by phone at (365) 888-7013 if you have any questions.

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Graphene on Ultra-Flat Thermal SiO2 Substrate
Graphene on SiO2 Substrate
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