Graphene on SiO2 Substrate
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In StockGraphene on SiO2 Substrate
Product Name |
Graphene on SiO2 Substrate |
Stock No. | NCZ-GSW-0011 |
Purity | > 99.9% |
Graphene Film |
|
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
Sheet Resistance | 450±40 Ω/sq (1cm x1cm) |
PRODUCT DETAIL
Characteristics
- Four thicknesses of CVD graphene: Available in either 1, 2, 3-5 or 6-8 layers
- The Ultra-flat Thermal SiO2 Substrate consists of a 200 nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5mm x 5mm.
- Graphene coverage of the TEM grid is 75-95 %
Type | Thickness of the Graphene | Transparency | Support Film |
1 Layer | ~0.35nm | ~96.4% | Ultra-flat Silicon |
2 Layers | ~0.7nm | ~92.7% | Ultra-flat Silicon |
3-5 Layers | 1.0-1.7nm | ~85.8-90.4% | Ultra-flat Silicon |
6-8 Layers | 2.1-2.8nm | ~78.5-83.2% | Ultra-flat Silicon |
Please contact us for customization and price inquiry.
Description
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities and customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) is available upon request.
NOTE:
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