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  • Ag-Doped Antibacterial Nanopowder Dispersion

    Product Ag-Doped Antibacterial Nanopowder Dispersion
    CAS No. 7440-22-4
    Appearance Gary
    Purity 99.9%
    APS 30 nm(Can be customized)
    Ingredient Ag
    Product Code NCZ-NSC430/20

    Ag-Doped Antibacterial Nanopowder Dispersion Description :

    Ag-Doped Antibacterial Nanopowder Dispersion is nanoparticles of silver of between 1 nm and 100 nm in size. While frequently described as being ‘silver’ some are composed of a large percentage of silver oxide due to their large ratio of surface to bulk silver atoms.

    Numerous shapes of Ag-doped Antibacterial Nanopowder Dispersion can be constructed depending on the application at hand. Commonly used silver nanoparticles are spherical, but diamond, octagonal, and thin sheets are also common.

    Their extremely large surface area permits the coordination of a vast number of ligands. The properties of silver nanoparticles applicable to human treatments are under investigation in laboratory and animal studies, assessing potential efficacy, toxicity, and costs.

    The most common methods for nanoparticle synthesis fall under the category of wet chemistry or the nucleation of particles within a solution.

    This nucleation occurs when a silver ion complex, usually Ag-Doped Antibacterial Nanopowder Dispersion, is reduced to colloidal silver in the presence of a reducing agent. When the concentration increases enough, dissolved metallic silver ions bind together to form a stable surface.

    The surface is energetically unfavorable when the cluster is small because the energy gained by decreasing the concentration of dissolved particles is not as high as the energy lost from creating a new surface.

    When the cluster reaches a certain size, known as the critical radius, it becomes energetically favorable, and thus stable enough to continue to grow.

    This nucleus then remains in the system and grows as more silver atoms diffuse through the solution and attach it to the surface.

    When the dissolved concentration of atomic silver decreases enough, it is no longer possible for enough atoms to bind together to form a stable nucleus.

    At this nucleation threshold, new nanoparticles stop being formed, and the remaining dissolved silver is absorbed by diffusion into the growing nanoparticles in the solution.

    As the particles grow, other molecules in the solution diffuse and attach to the surface. This process stabilizes the surface energy of the particle and blocks new silver ions from reaching the surface.

    The attachment of these capping/stabilizing agents slows and eventually stops the growth of the particle.

    The most common capping ligands are trisodium citrate and polyvinylpyrrolidone (PVP), but many others are also used in varying conditions to synthesize particles with particular sizes, shapes, and surface properties.

    There are many different wet synthesis methods, including the use of reducing sugars, nitrate reduction, reduction via sodium borohydride.

    The silver mirror reaction, the polyol process, seed-mediated growth, and light-mediated growth. Each of these methods, or a combination of methods, will offer differing degrees of control over the size distribution as well as distributions of geometric arrangements of the nanoparticle.

    Ag-Doped Antibacterial Nanopowder Dispersion  Related Information

    Storage Conditions:

    Airtight sealed, avoid light and keep dry at room temperature.  

    Please contact us for customization and price inquiry

    Email: [email protected]

    Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters.

    $0.00
  • Antimony Tin oxide Powder

    Product Name: Antimony Tin oxide powder

    Product Antimony Tin oxide powder
    Colour White
    Purity ≥ 99.9%
    Particle size 1-10 µM (customizable)
    Ingredient/MF SnO2, Sb2O3
    Product Code NCZ-CM-176/20
    CAS Number 18282-10-5/1309-64-4

    Application:

    ATO nanopowder is mainly used for antistatic plastics, coatings, fibers, radiation monitors with coatings, building energy-saving windows, solar cells, automobile windshields, optical display devices, transparent electrodes, catalysis and so on. In addition, Antimony Doped Tin Oxide (ATO)nanoparticle can also use in the microwave attenuation, computer rooms, radar shield protected areas, and shield electromagnetic fields.

    1. ATO has excellent electrical and optical properties that are widely used as good electrical conductivity, also as an antistatic agent widely used in paint, chemical fiber, polymer film field.
    2. ATO has good insulation properties. Used the ATO coating to be made of automotive glass is an excellent effect of shielding and reflecting infrared radiation.
    3. ATO with super fine conductive properties can be used in paints, textiles, plastics, and other fields, the direct mixing of liquid and configuration system, good compatibility.
    4. ATO has excellent electrical and optical properties. Used as an antistatic agent is widely used in paint, chemical fiber, polymer film field.

     

    Please email us for the customization.

    Email: [email protected]

    Please contact us for customization and price inquiry

    Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters.

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

     

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  • Product Name:  Bismuth Metal Polycrystalline Powder

     

    Product   polycrystalline
    CAS No. 7440-69-9
    Appearance brown Powder
    Purity 99.9%
    APS 1 – 5 Microns (Can be customized)
    Ingredient Bi
    Product Code NCZ-NSC-275/20

     

    Description :

    Bismuth compounds account for about half the production of bismuth. They are used in cosmetics, pigments, and a few pharmaceuticals, notably bismuth subsalicylate, used to treat diarrhea. Bismuth’s unusual propensity to expand as it solidifies is responsible for some of its uses, such as in the casting of printing type. Bismuth has unusually low toxicity for heavy metal. As the toxicity of lead has become more apparent in recent years, there is increasing use of bismuth alloys presently about a third of bismuth production) as a replacement for lead.

    RELATED INFORMATION

    Storage Conditions:

    Airtight sealed, avoid light, and keep dry at room temperature.

    Please contact us for customization and price inquiry

    Email: [email protected]

    Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters.

     

     

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  • D3O Sheets

    D3O Sheets Also available in  2mm, 4mm, and 6mm Thickness.

    D3O Sheets with shock-absorbing properties

    D3O® uses patented, patent-pending, and proprietary technologies to make rate-sensitive, soft, flexible materials with shock-absorbing properties.

    D3O Sheets D3O® foam sheets can be cut to size and applied to the body as an under-wrap to provide added protection to select body parts or to contusions without leaving the field for more than a few seconds. D3O® foam is soft and flexible and can be cut to any shape to match your specific needs.

    Add D3O®’s patented impact protection to existing equipment by cutting your own padding. D3O® foams are made from cutting-edge smart molecules that remain soft and flexible until a force is applied causing the material to react on the molecular level by seizing up and binding together providing uncompromising impact protection.

    D3O® set solid and mesh sheets reduce up to three times as much force as similar foam padding without the added bulk. Only 4mm of solid D3O® AERO out preforms 20mm of EVA foam in transmitted force testing by up to 60%. More than doubling the protective layer 10mm unskived AERO sheets are the ultimate side-line wrap.

    To learn more about D3O® foam sheets and to get a glimpse at the raw testing data click the link below.

    D3O-solid-mesh-sheet

    Pure Platinum Metal Sheet/Foil

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  • Product Name: Gallium Nitride Powder

    Product Gallium Nitride
    CAS No. 25617-97-4
    Appearance Yellow Powder
    Purity 99.9%
    APS 1 – 5 Microns (Can be customized)
    Ingredient GaN
    Product Code NCZ-NSC-135/20

    Description :

    Materials research and application of the current global semiconductor research front and hot is the development of microelectronic devices, optoelectronic devices of new semiconductor materials. It has a wide direct bandgap, strong atomic bonds, high thermal conductivity, good chemical stability (almost no acid corrosion), and other properties and strong anti-radiation ability in optoelectronics, high temperature, and high power devices and high-Frequency microwave device applications have a broad prospect.

    RELATED INFORMATION

    Storage Conditions:

    Airtight sealed, avoid light, and keep dry at room temperature.

    Please email us for the customization.

    Email: [email protected]

    Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.

    $0.00
  • Product Name: Lead Telluride Powder

    Product  Lead Telluride Powder
    CAS No. 1314-91-6
    Appearance Grey Powder
    Purity 99.9%
    APS 1 – 5 Microns (Can be customized)
    Ingredient PbTe
    Product Code NCZ-NSC-140/20

    Lead Telluride Description :

    Lead tin telluride is a ternary alloy of lead, tin, and tellurium, generally made by alloying either tin into lead telluride or lead into tin telluride. It is a narrow bandgap semiconductor material.

    The bandgap is tuned by varying the composition(x) in the material. SnTe can be alloyed with Pb (or PbTe with Sn) to tune the bandgap from (SnTe). Lead Telluride Powder important to note that unlike chalcogenides, e.g. cadmium, mercury, and zinc chalcogenides, the bandgap in Te does not change linearly between the two extremes. In contrast, as the composition (x) is increased, the bandgap decreases approach zero in the concentration regime (0.32–0.65 corresponding to temperature 4-300 K, respectively) and further increases towards the bulk bandgap of SnTe. Therefore, the lead-tin telluride alloys have narrower band gaps than their endpoint counterparts making lead tin telluride an ideal candidate for mid-infrared, 3–14 μm optoelectronic application.

    Lead Telluride Powder has a positive temperature coefficient i.e. for a given composition x, the bandgap increases with temperature. Therefore, temperature stability has to be maintained while working with lead-tin telluride based laser. However, the advantage is that the operating wavelength of the laser can simply be tuned by varying the operating temperature.

    The optical absorption coefficient of lead-tin telluride is typical ~750 cm−1 as compared to ~50 cm−1 for the extrinsic semiconductors such as doped silicon. The higher optical coefficient value not only ensures higher sensitivity but also reduces the spacing required between individual detector elements to prevent optical cross-talk making integrated circuit technology easily.

    Lead Telluride Related Information

    Storage Conditions:

    Airtight sealed, avoid light and keep dry at room temperature.

    Please email us for the customization.

    Email: [email protected]

    Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.

     

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  • Nickel Silicide Powder

    Product Name:  Nickel Silicide Powder

    Product Nickel Silicide Powder
    CAS No 12059-14-2
    Appearance White Powder
    Purity 99.9%
    APS 1 – 5 Microns (Can be customized)
    Ingredient Ni2Si
    Product Code NCZ-NSC-133/20

    Nickel Silicide Powder Related Information:

    Nickel Silicide Powder: The reaction between SiC with chemically plated nickel on its surface has been investigated. X-ray analysis gave a good number of lattice parameters for Ni 3Si, a = 0.3522nm, and has good agreement with the index. The surface layer of Ni diffuses into the SiC and exothermically forms Ni 3Si in a defined temperature range, producing free carbon which could be deleterious to the properties.

    A reaction is evident at temperatures 900°C and 1350°C with an increasing trend. The mechanism of sintering which is shown to be a reaction sintered transient-liquid phase method was determined by thermal analysis and metallographic techniques. The strength, hardness, and density properties of sintered Ni /Al (Liquid) + SiC composites are also reported.

    Storage Conditions:

    Airtight sealed, avoid light and keep dry at room temperature.

    Please email us for the customization.

    Email: [email protected]

    Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.

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  • Perlite Nanoclay Powder

    Product Name: Perlite Nanoclay Powder (Purity: > 99.9%, APS: 80-100 nm)

    Product

    Perlite Nanoclay Powder

    Cat No NCZ-MN-142/20
    CAS No 1332-58-7
    Purity 99.9%
    APS 80-100 nm
    Color Gray/ off white
    Specific Gravity 2.2-2.4
    Melting Point >2000 °F
    pH Neutral
    MOHS Hardness 5.5
    Water Absorption 200-600 % by weight
    Oil Adsorption 50-100 grms
    Softening Point 1800 F or 980
    G.E. Brightness % 70-80%
    Apparent Density 2.5-10.5 lb/ft3
    Wet Density 5-20 lb/ft3
    Refractive Index 1.47
    Perlite Nanoclay Related Information

    Storage Conditions:

    Airtight sealed, avoid light and keep dry at room temperature.

    Please contact us for customization and price inquiry

    Email: [email protected]

    Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters.

    $0.00
  • Pinnatoxin-G

    Product Name Pinnatoxin-G
    Cat No NCZ-000-101
    CAS No 1312711-74-2
    Synonyms Pinnatoxin G
    Molecular Formula C42H63NO7
    Molecular Weight 693.95

    Pinnatoxin-G CAS: 1312711-74-2

    D3O 10 mm Solid Sheet 10″x14.5″ (AERO) Unskived

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  • Product Name: Silicon oxide wafer P-Type (2 inches)

    Product Name Silicon oxide wafer P-Type (2 inches)
    Cat. No. NCZ-NSC318/20

     

    Diameter 50.8+- 0.2 mm (2 inch)

     

    Oxide Thickness 300 +- 20 nm (dry)

     

    Resistivity (1-10 Ohm/sq).

     

    Thickness 300+ 15 µm

     

    Orientation <100>+- 0.5

     

    Silicon oxide wafer P-Type (2 inches) Description

    Provided in Single wafer case

    Single Crystal Silicon for solar energy applications includes p-type and n-type silicon. Silicon Silicon-based photovoltaic cells (PV Cells) for solar energy are fabricated from a positively charged or p-type silicon layer underneath a negatively charged or n-type silicon layer. These layers can be produced from single crystal silicon material sold under the AE Solar Energy group.  Most silicon-based PV solar cells are produced from polycrystalline silicon with single-crystal systems the next most common. Silicon Metal is also available as a polycrystalline powder for casting, amorphous silicon for deposition, disc, granules, ingot, pellets, pieces, powder, rod, sputtering target, wire, and other forms and custom shapes. Ultra-high purity and high purity forms also include submicron powder and nanoscale powder. Single Crystal Silicon is generally immediately available in most volumes.

    Silicon oxide wafer P-Type (2 inches) RELATED INFORMATION

    Storage Conditions:

    Airtight sealed, avoid light, and keep dry at room temperature.

    Please email us for the customization.

    Email: [email protected]

    Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.

    $0.00
  • Single Crystal Silicon Wafer N-Type (1 inch)

    Product Name: Single Crystal Silicon Wafer N-Type (1 inch)

    Product Name Single Crystal Silicon Wafer N-Type (1 inch)
    Cat No. NCZ-NSC330/20
    Size 1 inch
    Thickness 300-380 micro-meter
    Type N-type
    Dopant Phosphorus
    Resistivity 1-10 ohm/cm
    Surface Single side polished
    Boling Point 2355 °C (lit.)
    Melting Point 1240 °C,1410 °C (lit.)
    Density 2.33 g/mL at 25 °C (lit.)
    Semiconductor Properties <100>, N-type
    SMILES string [Si]

    Physical properties:

    0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 – 3000 Ωcm.

    Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″

    Description:

    Single Crystal Silicon Wafer N-Type (1 inch). We have heated polished doped single-crystal silicon wafers in a single-mode microwave cavity to temperatures where surface to surface bonding occurred. The absorption of microwaves and heating of the wafers is attributed to the inclusion of n-type or p-type impurities into these substrates.

    A cylindrical cavity TM (sub 010) standing wave mode was used to irradiate samples of various geometry at positions of high magnetic field. This process was conducted in a vacuum to exclude plasma effects.

    This initial study suggests that the inclusion of impurities in single crystal silicon significantly improved its microwave absorption (loss factor) to a point where heating silicon wafers directly can be accomplished in minimal time. Bonding of these substrates, however, occurs only at points of intimate surface to surface contact. The inclusion of a thin metallic layer on the surfaces enhances the bonding process.

    Please email us for the customization.

    Email: [email protected]

    Please contact us for customization and price inquiry

    Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters

    $0.00
  • Single crystal silicon wafer N-type (2 inch)

    Product Name: Single crystal silicon wafer N-type (2 inch)

    Product Name Single crystal silicon wafer N-type (2 inch)
    Cat No. NCZ-NSC332/20
    Diameter 2 inch
    Doping N type
    Resistivity (1-10 Ohm/sq).
    Thickness 290 + 10 µm
    Orientation 100
    Polished Single side polished
    Form crystalline (cubic (a = 5.4037)
    Polished wafer (single side polished
    does not contain dopant
    dia 2 inch
    Thickness 0.5 mm
    Boling Point 2355 °C (lit.)
    Melting Point 1410 °C (lit.)
    Density 2.33 g/mL at 25 °C (lit.)
    Semiconductor properties <100>, N-type
    SMILES string [Si]

    Description:

    Single crystal silicon wafer N-type (2 inch) Nanochemazone® Supplies provides both standard and customized high-quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high-frequency power devices, just to name a few. Customized crystal growth, precision machining, and coating services are available. Please contact us today to discuss your project requirements.

     

    Please email us for the customization.

    Email: [email protected]

    Please contact us for customization and price inquiry

    Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters.

    $0.00
  • Single Crystal silicon-silicon dioxide Wafer   

    Product Name: Single Crystal silicon-silicon dioxide Wafer   

    Product Name Single Crystal silicon-silicon dioxide Wafer P-type (4 inches)
    Cat No. NCZ-NSC318/20
    Día                      100 mm (4 inches)
    Orientation <100>
    Wafer thickness 500 micrometer
    Resistivity <0.01
    Polished          Front Side Polished
     Thickness 300 nm (dry)
    Purity 99.9%
    Formula Si/SiO2

    Single Crystal silicon-silicon dioxide Wafer P-type Description :

    Provided in a single wafer case

    Silicon oxide wafer SIO2 thin-film among semiconductor technology, SiO2 thin film layers are mainly used as dielectric material and more recently, they are integrated with MEMS (Micro Electro Mechanical Systems) devices. The simplest way to produce silicon oxide layers on silicon wafers is to oxidize silicon with oxygen.

    Single Crystal silicon-silicon dioxide Wafer RELATED INFORMATION

    Storage Conditions:

    Airtight sealed, avoid light and keep dry at room temperature.

    Please email us for the customization.

    Email: [email protected]

    Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.

    $0.00
  • Product Name:  Lithium Titanate-Lithium Titanium Oxide Nanopowder

    Titanate-Lithium Titanium Oxide Nanopowder

    Product Titanate-Lithium Titanium Oxide Nanopowder
    Colour White
    Purity ≥ 99.99%
    Particle size 1-10 µM(customizable)
    Ingredient/MF Li4Ti5O12
    Product Code NCZ-CK-189/20
    CAS Number 12031-82-2/ 12031-95-7

    Please email us for the customization.

    Email: [email protected]

    Please contact us for customization and price inquiry

    Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters.

     

     

     

     

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