CVD Graphene on Silicon Substrate
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In StockCVD Graphene On Silicon Substrate
Product Name |
CVD Graphene On Silicon Substrate |
Stock No. | NCZ-GSW-0017 |
Purity | > 99.9% |
Graphene Film |
|
FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
Sheet Resistance | 450±40 Ω/sq (1cm x1cm) |
PRODUCT DETAIL
CAS No.: 7782-42-5 (graphene), 7440-21-3 (silicon)
Transparency | >95% |
PREPARATION METHOD:
- Copper-based graphene is prepared by CVD method.
- Graphene is transferred from copper to silicon substrate.
SILICON WAFER:
Wafer Thickness: | 525 µm, (customization is possible) |
Resistivity: | <0.01 ohm-cm |
Type/Dopant: | P/N |
Orientation: | <100> (customization is possible) |
Front Surface: | Polished |
Back Surface: | Etched |
CVD Graphene On Silicon Substrate Related Information
Storage Conditions:
Airtight sealed, avoid light and keep dry at room temperature.
Please contact us for customization and price inquiry
Email: contact@nanochemazone.com
Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters.
Description
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities and customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) is available upon request.
NOTE:
Images, pictures, colors, particle sizes, purity, packing, descriptions, and specifications for the real and actual goods may differ. These are only used on the website for the purposes of reference, advertising, and portrayal. Please contact us via email at sales@nanochemazone.com or by phone at (365) 888-7013 if you have any questions.