Graphene on Silicon Nitride TEM Grids
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In StockGraphene on Silicon Nitride TEM Grids
| Product Name |
Graphene on Silicon Nitride TEM Grids |
| Stock No. | NCZ-GSW-0012 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | 450±40 Ω/sq (1cm x1cm) |
Graphene on Silicon Nitride TEM Grids PRODUCT DETAIL
Characteristics
- Four thicknesses of CVD graphene: Available in either 1, 2, 3-5 or 6-8 layers
- TEM Substrate: 200 µm thick 3.0mm hexagonal silicon substrate with a 0.5×0.5mm aperture and 200nm thick silicon nitride membrane with approximately 6,400 2.5µm holes
- Graphene coverage of the TEM grid is > 75%
Appearance
Solid hexagonal disk with a greenish hue. The graphene film appears as a near-transparent to light-grey film on the surface of the microporous silicon Nitride membrane.
| Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
| 1 Layer | ~ 0.35 nm | ~ 96.4% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 2 Layers | ~0.7 nm | ~92.7% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 3-5 Layers | 1.0-1.7 nm | ~85.8-90.4% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
| 6-8 Layers | 2.1-2.8 nm | ~78.5-83.2% | 2.5 μm Hole Silicon Nitride | Silicon Nitride |
Please contact us for customization and price inquiry.
Description
Description
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Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) is available upon request.
NOTE:
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