Single crystal silicon wafer Intrinsic (2-inch)
$0.00
In StockSingle crystal silicon wafer Intrinsic (2-inch)
Product Name: Single crystal silicon wafer Intrinsic (2-inch)
| Product Name | Single crystal silicon wafer Intrinsic (2-inch) |
| Cat No. | NCZ-NSC329/20 |
| Diameter | 2 inch |
| Doping | Intrinsic |
| Resistivity | (>1000ohm/sq.) |
| Thickness | 400µm |
| Orientation | 100 |
| Polished | Single side polished |
Provided in a Single wafer case:
Description:
Single crystal silicon wafer Intrinsic (2-inch) is the most widely used semiconductor material as a substrate material due to its excellent machinability, mechanical stability, and the potential to combine sensing elements and electronics on the same substrate. Circular wafers made of silicon are used as a substrate in most MEMS sensors.
The crystal orientation should be known before manufacturing since silicon has orientation-dependent properties such as piezoresistivity coefficients and etching rates. The common orientation is (100) where the numbers represent Miller indices.
As an example, (100) wafer that has a primary flat side as an indication of < 110 > direction. When a piezoresistive element is placed on a (100) wafer, the orientation should be parallel to < 110 > direction if the piezoresistivity coefficients in that direction are intended to be utilized.
Please email us for the customization.
Email: contact@nanochemazone.com
Please contact us for customization and price inquiry
Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters.
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
Related products
-
Single Crystal Silicon Wafer Intrinsic (2 Inch)
Product Name: Single Crystal Silicon Wafer Intrinsic (2 Inch)
Product Name Single Crystal Silicon Wafer Intrinsic (2 Inch) Cat No. NCZ-NSC328/20 Size 50.8+/- 0.2mm, Thickness 430+/-10um Undoped Intrinsic Resistivity 2000~4000Ω.cm Orientation <100>+/-0.5° Polishing One Side Polished Provided in a single wafer case
Description:
Single Crystal Silicon Wafer Intrinsic is the most widely used semiconductor material as a substrate material due to its excellent machinability, mechanical stability, and the potential to combine sensing elements and electronics on the same substrate.
Circular wafers made of silicon are used as a substrate in most MEMS sensors. The crystal orientation should be known before manufacturing since silicon has orientation-dependent properties such as piezoresistivity coefficients and etching rates. The common orientation is (100) where the numbers represent Miller indices.
As an example, (100) wafer that has a primary flat side as an indication of < 110 > direction. When a piezoresistive element is placed on a (100) wafer, the orientation should be parallel to < 110 > direction if the piezoresistivity coefficients in that direction are intended to be utilized.
$0.00 -
Single Crystal Silicon Wafer N-Type (1 inch)
Product Name: Single Crystal Silicon Wafer N-Type (1 inch)
Product Name Single Crystal Silicon Wafer N-Type (1 inch) Cat No. NCZ-NSC330/20 Size 1 inch Thickness 300-380 micro-meter Type N-type Dopant Phosphorus Resistivity 1-10 ohm/cm Surface Single side polished Boling Point 2355 °C (lit.) Melting Point 1240 °C,1410 °C (lit.) Density 2.33 g/mL at 25 °C (lit.) Semiconductor Properties <100>, N-type SMILES string [Si] Physical properties:
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 – 3000 Ωcm.
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″
Description:
Single Crystal Silicon Wafer N-Type (1 inch). We have heated polished doped single-crystal silicon wafers in a single-mode microwave cavity to temperatures where surface to surface bonding occurred. The absorption of microwaves and heating of the wafers is attributed to the inclusion of n-type or p-type impurities into these substrates.
A cylindrical cavity TM (sub 010) standing wave mode was used to irradiate samples of various geometry at positions of high magnetic field. This process was conducted in a vacuum to exclude plasma effects.
This initial study suggests that the inclusion of impurities in single crystal silicon significantly improved its microwave absorption (loss factor) to a point where heating silicon wafers directly can be accomplished in minimal time. Bonding of these substrates, however, occurs only at points of intimate surface to surface contact. The inclusion of a thin metallic layer on the surfaces enhances the bonding process.
Please email us for the customization.
Email: contact@nanochemazone.com
Please contact us for customization and price inquiry
Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters
$0.00 -
Single Crystal Silicon Wafer N-type (4-inch)
Product Name: Single Crystal Silicon Wafer N-type (4-inch)
Product Name Single Crystal Silicon Wafer N-type (4-inch) Cat No. NCZ-NSC331/20 Día 4 inches Type N Diameter (mm) 4” (100.8mm) Type N-Type Doping Phosphorous Crystal Orientation <100> Surface: Single Side Polished Thickness 250-500μm Resistivity 1-10ohm-cm Crystal method CZ RRG (%) ≤12 Oxygen Contents (ppm) 12.5-16.5 Carbon Contents (ppm) ≤1 Description:
Wafer resizing is sometimes referred to as wafer coring, re-sizing, cut down, cut-down, downsizing, down-sizing, size reducing or size reduction. We can accept orders ranging from a single wafer to hundreds of wafers per month. Our process is efficient, innovative, and ESD friendly. Our proprietary process causes less stress to the silicon wafer than other resizing methods. We also round wafer edges to eliminate edge chipping.
We frequently work with 2” (50 mm), 3” (75 mm), 100 mm (4”), 125 mm (5”), 150 mm (6”), 200 mm (8”), and 300 mm wafers; however, we are also capable of producing custom non-standard sizes.
Please email us for the customization.
Email: contact@nanochemazone.com
Please contact us for customization and price inquiry
Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters.
$0.00 -
Single Crystal silicon-silicon dioxide Wafer N-type (4 inch)
Product Name Single Crystal Silicon Wafer P-Type (4 Inch) Cat No. NZC-NSC333/20 MF Si/SiO2 Día 100mm ± 0.5mm (4 inch) Type/Dopant P Orientation <100> Wafer thickness 525±25um Resistivity 1-10 ohm-cm Polished Single side polished TTV < 10um SiO2 Oxide Thickness 300 nm (dry) Provided in single wafer box
Crystal silicon-silicon dioxide Wafer N-type (4 inches) Description
Single crystal silicon is the most widely used semiconductor material as a substrate material due to its excellent machinability, mechanical stability, and the potential to combine sensing elements and electronics on the same substrate. Circular wafers made of silicon are used as the substrate in most MEMS sensors. The crystal orientation should be known before manufacturing since silicon has orientation-dependent properties such as piezoresistivity coefficients and etching rates. The common orientation is (100) where the numbers represent Miller indices. As an example, (100) wafer that has a primary flat side as an indication of < 110 > direction. When a piezoresistive element is placed on a (100) wafer, the orientation should be parallel to < 110 > direction if the piezoresistivity coefficients in that direction are intended to be utilized.
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.comCustomization: If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
Crystal Silicon dioxide Wafer N-type (4 inches) RELATED INFORMATION
Storage Conditions:
Airtight sealed, avoid light, and keep dry at room temperature.
Please contact us for customization and price inquiry
Email: contact@nanochemazone.com
Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters.
$0.00 -
Single Crystal Silicon Dioxide Wafer P-Type
Product Name: Single Crystal Silicon Dioxide Wafer P-Type
Product Name Single Crystal Silicon Dioxide Wafer P-Type Cat. No. NCZ-NSC 319/20 Diameter 100 mm +-0.2 mm (4″)
Oxide Thickness 300 ±20 nm (dry) Color Violet Thickness 500 ± 20 micron Resistivity
1-10 ohm-cm
Type/Dopant P Orientation <100> Single Crystal Silicon Dioxide Wafer P-Type (4 inches) Description
Single Crystal Silicon Dioxide Wafer P-Type Nanochemazone® produces Silicon Oxide Wafer with the highest possible density. Our standard wafer size is nominally 25.4 mm (1 inch) to 300 mm (11.8 inches). Materials are produced using crystallization, solid-state, and other ultra-high purification processes such as sublimation.
This process forms a cylindrical ingot which is then sliced and polished to form wafers. Nanochemazone® High Purity (99.999%) Silicon Oxide Wafers- Polished & Unpolished specializes in producing custom compositions for commercial and research applications and new proprietary technologies.
Nanochemazone® also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles and in the form of solutions and organometallics. We also produce Silicon as rod, pellets, powder, pieces, disc, ingot, wire, and in compound forms, such as oxide. Other shapes are available by request.
Single Crystal Silicon Dioxide Wafer P-Type (4 inches) RELATED INFORMATION
Storage Conditions:
Airtight sealed, avoid light, and keep dry at room temperature.
Please email us for the customization.
Email: contact@nanochemazone.com
Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.
$0.00 -
Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)
Product Name: Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)
Product Name Single Crystal Silicon Wafer Cat No. NCZ-NSC327/20 Diameter 4 inches Doping undoped Thickness 400~415+/-10um Resistivity 4000 5000 ohms.cm Undoped Orientation <100>+/-0.5 Polishing one side polished Application Research Material Thickness 525 Micron Resistivity 1-10 ohm-cm Polished Single side polished Provided in Single wafer case.
Description:
Single Crystal Silicon Wafer thickness Is determined by the mechanical strength of the material used the wafer must be thick enough to support its own weight without cracking during handling. Wafers are grown from crystal having a regular crystal structure, with silicon having a diamond cubic structure. Orientation is defined by the Miller index with (100) or (111) faces being the most common for silicon. Ion implantation depends on the wafer’s crystal orientation since each direction offers distinct paths the transport.
Note: SSP = Single Side Polished, DSP = Double Side Polished, E = Etched, C = AsCut, Material – CZ unless noted, L = Lapped, Und = Undoped (Intrinsic)
$0.00
