Name: Single Crystal silicon-silicon dioxide Wafer Low Price 10 | Nanochemazone
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Product Name: Single Crystal silicon-silicon dioxide Wafer

Product Name

Single Crystal silicon-silicon dioxide Wafer P-type (4 inches)

Cat No.

NCZ-NSC318/20

Día

100 mm (4 inches)

Orientation

<100>

Wafer thickness

500 micrometer

Resistivity

<0.01

Polished

Front Side Polished

Thickness

300 nm (dry)

Purity

99.9%

Formula

Si/SiO2

Provided in a single wafer case

Silicon oxide wafer SIO2 thin-film among semiconductor technology, SiO2 thin film layers are mainly used as dielectric material and more recently, they are integrated with MEMS (Micro Electro Mechanical Systems) devices. The simplest way to produce silicon oxide layers on silicon wafers is to oxidize silicon with oxygen.

Single Crystal silicon-silicon dioxide Wafer RELATED INFORMATION

Storage Conditions:

Airtight sealed, avoid light and keep dry at room temperature.

Please email us for the customization.

Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.

Description

Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities and customization. E-mail: contact@nanochemazone.com

Customization:

If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) is available upon request.

NOTE:

Images, pictures, colors, particle sizes, purity, packing, descriptions, and specifications for the real and actual goods may differ. These are only used on the website for the purposes of reference, advertising, and portrayal. Please contact us via email at sales@nanochemazone.com or by phone at (365) 888-7013 if you have any questions.

Product Name	Single crystal silicon wafer N-type (2 inch)
Cat No.	NCZ-NSC332/20
Diameter	2 inch
Doping	N type
Resistivity	(1-10 Ohm/sq).
Thickness	290 + 10 µm
Orientation	100
Polished	Single side polished
Form	crystalline (cubic (a = 5.4037)
Polished	wafer (single side polished
does not contain	dopant
dia	2 inch
Thickness	0.5 mm
Boling Point	2355 °C (lit.)
Melting Point	1410 °C (lit.)
Density	2.33 g/mL at 25 °C (lit.)
Semiconductor properties	<100>, N-type
SMILES string	[Si]

Product	Niobium Nanoparticles
Cat No	NCZ-MN-068/20
CAS No	7440-03-1
Purity	>99%
APS	80 nm (Can be Customized)
Molecular Formula	Nb
Molecular Weight	92.906 g/mol
Form	Powder
Color	Grey
Density	8.57 g/cm³
Melting Point	2768 °C
Boiling Point	4722 °C
Solubility	Insoluble in water

Product	dNTP Mix Ultrapure (2.5mM each)
CAS No.	N/A
Appearance	Liquid
Purity	≥99% (Other purities are also available)
APS	N/A
Ingredient	N/A
Product Code	NCZ-NP-696/24
Molecular Weight	N/A
Density	N/A

Product	JAN-C-178 – Charcoal Powder
CAS No.	7440-44-0
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	1-5 µM, 10-53 µM (Can be customized), Ask for other available size range.
Ingredient	C
Product Code	NCZ-CS-199/24
Molecular Weight	N/A
Density	N/A

Product	Titanate-Lithium Titanium Oxide Nanopowder
Colour	White
Purity	≥ 99.99%
Particle size	1-10 µM(customizable)
Ingredient/MF	Li4Ti5O12
Product Code	NCZ-CK-189/20
CAS Number	12031-82-2/ 12031-95-7

Product Categories

Single Crystal Silicon-Silicon dioxide Wafer

Single Crystal silicon-silicon dioxide Wafer

Product Name: Single Crystal silicon-silicon dioxide Wafer